Volume 1, No.1, June, 2013
Home > Published Issues > 2013 > Volume 1, No.1, June, 2013 >

Theoretical Investigation of MgZnO/CdZnO/MgZnO Double Heterostructure Bluish LED with Improved Internal Quantum Efficiency

Saurabh Kumar Pandey, Shruti Verma, Sushil Kumar Pandey, and Shaibal Mukherjee
Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore-453441, Madhya Pradesh, India
Abstract—A design approach for zinc oxide (ZnO) based double heterostructure light emitting diode (LED) has been proposed to achieve near band edge bluish electroluminescence around 430 nm with internal quantum efficiency (IQE) of 55%. Rigorous theoretical investigation has been performed for the device optimization; more specifically optimization of device barriers and cap layers along with active region. The optimization involves thickness, doping, and alloy composition calibrations of various constituent layers.

Index Terms—double heterostructure, quantum efficiency, bluish zno led, electroluminescence

Cite: Saurabh Kumar Pandey, Shruti Verma, Sushil Kumar Pandey, and Shaibal Mukherjee, "Theoretical Investigation of MgZnO/CdZnO/MgZnO Double Heterostructure Bluish LED with Improved Internal Quantum Efficiency," International Journal of Materials Science and Engineering, Vol.1, No.1, pp.1-4, June 2013. doi: 10.12720/ijmse.1.1.1-4

General Information

ISSN: 2315-4527 (Print)
Abbreviated Title: Int. J. Mater. Sci. Eng.
Editor-in-Chief: Prof. Emeritus Dato' Dr. Muhammad Yahaya
DOI: 10.17706/ijmse
Abstracting/ Indexing: Ulrich's Periodicals Directory, Google Scholar, Crossref
E-mail: ijmse@iap.org

What's New