Volume 2, No. 2, December, 2014
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Fabrication of a CHMOSFET with a Combination of P-Carbon Nanotube and an Enhanced NMOS

Uzoma I. Oduah
University Of Lagos/Physics Department, Lagos, Nigeria
Abstract—This study focuses on the fabrication of a Complementary Heterostructure Metal Oxide Semiconductor Field Effect Transistor (CHMOSFET) by combining a P-carbon nanotube with NMOS on a single chip to achieve miniaturized size below 0.1 micron and improved functionalities. The technology of conventional MOSFET and Nanotechnology is applied in this research. Consequently, the P-carbon nanotube acts as a PMOS while the conventional NMOS with a heavily doped polysilicon gate and a thick oxide is embedded on the same chip. Although it is possible to fabricate both a P and N carbon nanotube to form a complementary pair, and also a PMOS and NMOS to form a complementary pair, however this research chooses to form a heterostructure with improved functionalities. The enhanced features include a reduction in risk of sensitivity to input voltage fluctuations. It creates a better system of managing the valley current towards demarcating the On and Off modes of the device. It limits cryogenic operations. Also it enhances a better control of the effect of extreme sensitivity of tunneling current width of potential barriers.

Index Terms—carbon nanotube, nanotechnology, heterostructure, MOSFET

Cite: Uzoma I. Oduah, "Fabrication of a CHMOSFET with a Combination of P-Carbon Nanotube and an Enhanced NMOS," International Journal of Materials Science and Engineering, Vol. 2, No. 2, pp. 126-130, December 2014. doi: 10.12720/ijmse.2.2.126-130

General Information

ISSN: 2315-4527
Editor-in-Chief: Prof. Emeritus Dato' Dr. Muhammad Yahaya
DOI: 10.17706/ijmse
Abstracting/ Indexing: Ulrich's Periodicals Directory, Google Scholar, Crossref
E-mail: ijmse@iap.org